?002 fairchild semiconductor corporation RFP15N15 rev. b RFP15N15 15a, 150v, 0.150 ohm, n-channel power mosfets these are n-channel enhancement mode silicon gate power ?ld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. these types can be operated directly from integrated circuits. formerly developmental type ta09195. features 15a, 150v ? ds(on) = 0.150 ? related literature - tb334 ?uidelines for soldering surface mount components to pc boards symbol packaging jedec to-220ab ordering information part number package brand RFP15N15 to-220ab RFP15N15 note: when ordering, use the entire part number. d g s source drain gate drain (tab) january 2002 data sheet
?002 fairchild semiconductor corporation RFP15N15 rev. b absolute maximum ratings t c = 25 o c, unless otherwise speci?d RFP15N15 units drain to source voltage (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v dss 150 v drain to gate voltage (r gs = 20k ? ) (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v dgr 150 v continuous drain current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d pulsed drain current (note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i dm 15 40 a a gate to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gs 20 v maximum power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d linear derating factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 0.6 w w/ o c operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t j, t stg -55 to 150 o c maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l package body for 10s, see techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t pkg 300 260 o c o c caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. note: 1. t j = 25 o c to 125 o c. electrical speci?ations t c = 25 o c, unless otherwise speci?d parameter symbol test conditions min typ max units drain to source breakdown voltage bv dss i d = 250 a, v gs = 0v 150 - - v gate threshold voltage v gs(th) v gs = v ds , i d = 250 a2-4v zero gate voltage drain current i dss v ds = rated bv dss , v gs = 0v - - 1 a v ds = 0.8 x rated bv dss , v gs = 0v, t c = 125 o c25 a gate to source leakage current i gss v gs = 20v, v ds = 0v - - 100 na drain to source on resistance (note 2) r ds(on) i d = 15a, v gs = 10v (figures 6, 7) - - 0.150 ? drain to source on voltage (note 2) v ds(on) i d = 15a, v gs = 10v - - 2.25 v input capacitance c iss v ds = 25v, v gs = 0v, f = 1mhz (figure 9) - - 1700 pf output capacitance c oss - - 750 pf reverse-transfer capacitance c rss - - 350 pf turn-on delay time t d(on) v dd = 75v, i d 7.5a, r g = 50 ?, v gs = 10v r l = 9.9 ?, (figures 10, 11, 12) -5075ns rise time t r - 150 225 ns turn-off delay time t d(off) - 185 280 ns fall time t f - 125 190 ns thermal resistance junction-to-case - - 1.67 o c/w source to drain diode speci?ations parameters symbol test conditions min typ max units source to drain diode voltage (note 2) v sd i sd = 7.5a - - 1.4 v reverse recovery time t rr i sd = 4a, di sd /dt = 100a/ s - 200 - ns notes: 2. pulse test: width 300 s, duty cycle 2%. 3. repetitive rating: pulse width is limited by maximum junction temperature. RFP15N15
?002 fairchild semiconductor corporation RFP15N15 rev. b typical performance curves unless otherwise speci?d figure 1. normalized power dissipation vs case temperature figure 2. maximum continuous drain current vs case temperature figure 3. forward bias safe operating area figure 4. saturation characteristics figure 5. transfer characteristics figure 6. drain to source on resistance vs drain current 0 50 100 150 0 t c , case temperature ( o c) power dissipation multiplier 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a) 16 14 12 10 8 6 4 2 0 1 10 1000 100 v ds , drain to source (v) 0.1 1 10 100 i d , drain current (a) operation in this area may be limited by r ds(on) t c = 25 o c curve must be derated linearly with increase in temperature 30 20 10 0 0 1234 567 v ds , drain to source voltage (v) i d , drain current (a) duty cycle 2% t c = 25 o c v gs = 20v 7v 6v 5v 4v 8v 3.6v 10v pulse duration = 80 s 012345678910 v gs , gate to source voltage (v) 40 35 30 25 20 15 10 5 0 i ds(on) , drain to source current (a) v ds = 10v pulse duration = 80 s duty cycle 2% t c = 125 o c t c = -40 o c t c = 125 o c t c = -40 o c t c = 25 o c 0 5 10 15 20 25 30 35 i d , drain current (a) 0.30 0.25 0.20 0.15 0.10 0.05 0 r ds(on) , drain to source on resistance ( ? ) v gs = 10v pulse duration = 80 s duty cycle 2% t c = 125 o c t c = 25 o c t c = -40 o c case tempera ture RFP15N15
?002 fairchild semiconductor corporation RFP15N15 rev. b figure 7. normalized drain to source on resistance vs junction temperature figure 8. normalized gate threshold voltage vs junction temperature figure 9. capacitance vs drain to source voltage note: refer to fairchild application notes an7254 and an7260. figure 10. normalized switching waveforms for constant gate current typical performance curves unless otherwise speci?d (continued) i d = 15a v gs = 10v -50 0 50 100 150 200 t j , junction temperature ( o c) 2.0 1.5 1.0 0.5 0 r ds(on) , normalized drain to source on resistance pulse duration = 80 s -50 0 50 100 150 200 t j , junction temperature ( o c) 1 0.8 0.6 1.2 1.4 normalized gate threshold voltage v gs = v ds i d = 250 a 0 1020304050 v ds , drain to source voltage (v) 1600 1400 1200 1000 800 600 400 200 0 c, capacitance (pf) c rss c oss c iss v gs = 0v, f = 1mhz c iss = c gs + c gd c rss = c gd c oss c ds + c gd 150 112.5 75 37.5 0 10 8 6 4 2 0 v dd = bv dss v dd = bv dss gate source voltage drain source voltage i g(ref) i g(act) 20 i g(ref) i g(act) 80 t, time ( s) v gs , gate to source voltage (v) v ds , drain to source voltage (v) 0.75bv dss 0.50bv dss 0.25bv dss r l = 10 ? i g(ref) = 1ma v gs = 10v test circuits and waveforms figure 11. switching time test circuit figure 12. resistive switching waveforms v gs r l r g dut + - v dd t on t d(on) t r 90% 10% v ds 90% 10% t f t d(off) t off 90% 50% 50% 10% pulse width v gs 0 0 RFP15N15
disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein t o improve reliability , function or design. fairchild does not assume any liability arising out of the applica tion or use of any product or circuit described herein; neither does it convey any license under its p a tent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production optologic? optoplanar? pacman? pop? power247? powertrench qfet? qs? qt optoelectronics? quiet series? silent switcher fast fastr? frfet? globaloptoisolator? gto? hisec? isoplanar? littlefet? microfet? micropak? microwire? rev. h4 a acex? bottomless? coolfet? crossvolt ? densetrench? dome? ecospark? e 2 cmos tm ensigna tm fact? fact quiet series? smart start? star*power? stealth? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? trutranslation? uhc? ultrafet a a a star*power is used under license vcx?
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